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Long time transients in hafnium oxidePUZZILLI, G; IRRERA, F.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2394-2397, issn 0167-9317, 4 p.Conference Paper

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A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory DevicesYANG LU; BIN GAO; YIHAN FU et al.IEEE electron device letters. 2012, Vol 33, Num 3, pp 306-308, issn 0741-3106, 3 p.Article